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BFG520W; BFG520W/X
NPN 9 GHz wideband transistors
Rev. 04 -- 21 November 2007 Product data sheet
IMPORTANT NOTICE
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NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
FEATURES * High power gain * Low noise figure * High transition frequency * Gold metallization ensures excellent reliability. APPLICATIONS RF front end wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV) and repeater amplifiers in fibre-optic systems.
PINNING DESCRIPTION PIN BFG520W 1 2 3 4 collector base emitter emitter BFG520W/X collector emitter base emitter
handbook, halfpage
4
3
DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package.
1 2
MBK523
MARKING TYPE NUMBER BFG520W BFG520W/X QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE Cre fT GUM |S21|2 F PARAMETER collector-base voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain insertion power gain noise figure Ts 85 C IC = 20 mA; VCE = 6 V IC = 0; VCB = 6 V; f = 1 MHz open emitter collector-emitter voltage RBE = 0 CONDITIONS CODE N3 N4
Top view
Fig.1 Simplified outline SOT343N.
MIN. - - - - 60 - -
TYP. MAX. UNIT - - - - 120 0.35 9 17 17 1.1 20 15 70 500 250 - - - - 1.6 pF GHz dB dB dB V V mA mW
IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 C
IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C - IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C 16 s = opt; IC = 5 mA; VCE = 6 V; f = 900 MHz -
Rev. 04 - 21 November 2007
2 of 15
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER thermal resistance from junction to soldering point CONDITIONS Ts 85 C; note 1 VALUE 180 UNIT K/W PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts 85 C; see Fig.2; note 1 RBE = 0 open collector CONDITIONS open emitter - - - - - -65 - MIN. MAX. 20 15 2.5 70 500 +150 175 V V V mA mW C C UNIT
handbook, halfpage
600
MBG248
P tot (mW) 400
200
0 0 50 100 150 T s ( C)
o
200
Fig.2 Power derating curve.
Rev. 04 - 21 November 2007
3 of 15
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CES V(BR)EBO ICBO hFE Cre fT GUM PARAMETER collector-base breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain feedback capacitance transition frequency maximum unilateral power gain; note 1 CONDITIONS IC =10 A; IE = 0 IE = 10 A; IC = 0 VCB = 6 V; IE = 0 IC = 20 mA; VCE = 6 V; see Fig.3 IC = 0; VCB = 6 V; f = 1 MHz; see Fig.4 IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 C; see Fig.5 MIN. 20 15 2.5 - 60 - - TYP. - - - - 120 0.35 9 17 11 17 1.1 1.6 1.85 17 26 275 -50 MAX. - - - 50 250 - - - - - 1.6 2.1 - - - - - pF GHz dB dB dB dB dB dB dBm dBm mV dB UNIT V V V nA
collector-emitter breakdown voltage IC = 10 A; RBE = 0
IC = 20 mA; VCE = 6 V; f = 900 MHz; - Tamb = 25 C IC = 20 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 C -
|S21|2 F
insertion power gain noise figure
IC = 20 mA; VCE = 6 V; f = 900 MHz; 16 Tamb = 25 C s = opt; IC = 5 mA; VCE = 6 V; f = 900 MHz s = opt; IC = 20 mA; VCE = 6 V; f = 900 MHz s = opt; IC = 5 mA; VCE = 6 V; f = 2 GHz - - -
PL1 ITO Vo d2 Notes
output power at 1 dB gain compression third order intercept point output voltage second order intermodulation distortion
IC = 20 mA; VCE = 6 V; f = 900 MHz; - RL = 50 ; Tamb = 25 C note 2 note 3 note 4 - - -
S 21 2 1. GUM is the maximum unilateral power gain, assuming S12 is zero. G UM = 10 log -------------------------------------------------------------- dB. ( 1 - S 11 2 ) ( 1 - S 22 2 ) 2. IC = 20 mA; VCE = 6 V; RL = 50 ; Tamb = 25 C; fp = 900 MHz; fq = 902 MHz; measured at 2fp - fq = 898 MHz and 2fq - fp = 904 MHz. 3. dim = -60 dB (DIN45004B); IC = 20 mA; VCE = 6 V; Vp = Vo; Vq = Vo -6 dB; Vr = Vo -6 dB; RL = 75 ; fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz; measured at fp + fq - fr = 793.25 MHz. 4. IC = 20 mA; VCE = 6 V; Vo = 75 mV; RL = 75 ; Tamb = 25 C; fp = 250 MHz; fq = 560 MHz; measured at fp + fq = 810 MHz.
Rev. 04 - 21 November 2007
4 of 15
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
MLB807
handbook, halfpage
150
handbook, halfpage
0.6
MLB808
h FE
C re (pF) 0.4
100
50
0.2
0 10 1
0 1 10 I C (mA) 102 0 2.5 5 7.5 VCB (V) 10
VCE = 6 V.
IC = 0; f = 1 MHz.
Fig.3
DC current gain as a function of collector current; typical values.
Fig.4
Feedback capacitance as a function of collector-base voltage; typical values.
handbook, halfpage
12
MLB809
fT (GHz) 8
V CE = 6V 3V
4
0 1 10 I C (mA) 10 2
f = 1 GHz; Tamb = 25 C.
Fig.5
Transition frequency as a function of collector current; typical values.
Rev. 04 - 21 November 2007
5 of 15
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
handbook, halfpage
30
MLB810
handbook, halfpage
30
MLB811
gain (dB) 20
gain (dB) 20
MSG
G max G UM
MSG 10 10
G max G UM
0
0
10
20
30 I C (mA)
40
0
0
10
20
30 I C (mA)
40
f = 900 MHz; VCE = 6 V.
f = 2 GHz; VCE = 6 V.
Fig.6
Gain as a function of collector current; typical values.
Fig.7
Gain as a function of collector current; typical values.
handbook, halfpage
50
MLB812
handbook, halfpage
50
MLB813
gain (dB) 40
G UM
gain (dB) 40
G UM MSG
MSG 30 30
20
20 G max 10
10
G max
0 10 10
2
0 10
3
f (MHz)
10
4
10
10
2
10
3
f (MHz)
10
4
IC = 5 mA; VCE = 6 V.
IC = 20 mA; VCE = 6 V.
Fig.8
Gain as a function of frequency; typical values.
Fig.9
Gain as a function of frequency; typical values.
Rev. 04 - 21 November 2007
6 of 15
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
handbook, halfpage
30
MLB818
handbook, halfpage
30
MLB819
d im (dB) 40
d2 (dB) 40
50
50
60
60
70 0 10 20 30 I C (mA) 40
70 0 10 20 30 I C (mA) 40
Vo = 275 mV; fp + fq - fr = 793.25 MHz; VCE = 6 V; RL = 75 ; Tamb = 25 C.
Vo = 75 mV; fp + fq = 810 MHz; VCE = 6 V; RL = 75 Tamb = 25 C.
Fig.10 Intermodulation distortion as a function of collector current; typical values.
Fig.11 Second order intermodulation distortion as a function of collector current; typical values.
handbook, halfpage
4
MLB820
handbook, halfpage
20
MLB821
F (dB) 3 f = 2000 MHz
G ass (dB) 15
f = 900 MHz 1000 MHz
2000 MHz 2 1000 MHz 900 MHz 500 MHz 10
1
5
0 1 10 I C (mA)
10 2
0 1 10 I C (mA)
10 2
VCE = 6 V.
VCE = 6 V.
Fig.12 Minimum noise figure as a function of collector current; typical values.
Fig.13 Associated available gain as a function of collector current; typical values.
Rev. 04 - 21 November 2007
7 of 15
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
MLB822
handbook, halfpage
4
handbook, halfpage
20
MLB823
F (dB) 3
G ass (dB) 15
I C = 5 mA
20 mA
2 IC = 20 mA 1 5 mA
10
5
0 10 2
10 3
f (MHz)
10 4
0 10 2
10 3
f (MHz)
10 4
VCE = 6 V.
VCE = 6 V.
Fig.14 Minimum noise figure as a function of frequency; typical values.
Fig.15 Associated available gain as a function of frequency; typical values.
Rev. 04 - 21 November 2007
8 of 15
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
handbook, full pagewidth
unstable region 135 o
90 o 1.0 1 0.5 2 45 o 0.8 0.6 opt F min = 1.1 dB 0.4 0.2 2 5 0o 0
0.2
5
180 o stability circle
0
0.2
0.5
1 F = 1.5 dB F = 2 dB
0.2 F = 3 dB
5
0.5 135 o 1
2
45 o
MLB824
1.0
f = 900 MHz; VCE = 6 V; IC = 5 mA; Zo = 50 .
90 o
Fig.16 Common emitter noise figure circles; typical values.
90 o
handbook, full pagewidth
1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2
(2)
0.2
(3)
(4)
5
180 o
0
0.2
0.5
(1)
1
2
5
0o
0
(5)
(1) (2) (3) (4) (5)
opt; Fmin = 1.85 dB. F = 2 dB. F = 2.5 dB. F = 3 dB. ms; Gmax = 11.8 dB.
0.2
(6) (7)
5
0.5 135 o
(8)
2 1
45 o
MLB825
(6) G = 11 dB. (7) G = 10 dB. (8) G = 9 dB. f = 2 GHz; VCE = 6 V; IC = 5 mA; Zo = 50 .
1.0
90 o
Fig.17 Common emitter noise figure circles; typical values.
Rev. 04 - 21 November 2007
9 of 15
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
90 o
handbook, full pagewidth
1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2 180 o 0 0.2 0.5 1 2 5 0o 0
0.2
3 GHz
5
40 MHz 0.2 5
0.5 135 o 1
2
45 o
MLB814
1.0
VCE = 6 V; IC = 20 mA; Zo = 50 .
90 o
Fig.18 Common emitter input reflection coefficient (S11); typical values.
90 o
handbook, full pagewidth
135 o
45 o
40 MHz 180 o 3 GHz 50 40 30 20 10 0o
135 o
45 o
90 o VCE = 6 V; IC = 20 mA.
MLB815
Fig.19 Common emitter forward transmission coefficient (S21); typical values.
Rev. 04 - 21 November 2007
10 of 15
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
90 o
handbook, full pagewidth
135 o
3 GHz
45 o
180 o 0.25
40 MHz 0.20 0.15 0.10 0.05
0o
135 o
45 o
90 o VCE = 6 V; IC = 20 mA.
MLB816
Fig.20 Common emitter reverse transmission coefficient (S12); typical values.
90 o
handbook, full pagewidth
1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2 180 o 0 0.2 0.5 1 2 5 0o 0
0.2
5
40 MHz 0.2 3 GHz 5
0.5 135 o 1
2
45 o
MLB817
1.0
VCE = 6 V; IC = 20 mA; Zo = 50 .
90 o
Fig.21 Common emitter output reflection coefficient (S22); typical values.
Rev. 04 - 21 November 2007
11 of 15
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
SPICE parameters for the BFG520W die SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 22 23 24 25 26 27 28 29 30 31 32 33 34 35
(1) (1) (1)
PARAMETER IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJC TR CJS
VALUE 1.016 220.1 1.000 48.06 510 283 2.035 100.7 0.988 1.692 2.352 24.48 1.022 10.00 1.000 10.00 775.3 2.210 0.000 1.110 3.000 1.245 600.0 0.258 8.616 6.788 1.414 110.3 45.01 447.6 189.2 0.070 0.130 543.7 0.000 - - V
UNIT fA
SEQUENCE No. 36 38 Note
(1)
PARAMETER VJS MJS FC
VALUE 750.0 0.000 0.780 - -
UNIT mV
37 (1)
mA fA - - - V mA aA - A m - eV - pF mV - ps - V mA deg fF mV - - ps F
1. These parameters have not been extracted, the default values are shown.
handbook, halfpage
C cb
L1 B
LB B' E' LE C'
L2 C
C be
Cce
MBC964
L3
E QLB = 50; QLE = 50; QLB,E(f) = QLB,E(f/fc) fc = scaling frequency = 1 GHz.
21 (1)
Fig.22 Package equivalent circuit SOT343N.
List of components (see Fig.22) DESIGNATION Cbe Ccb Cce L1 L2 L3 LB LE 70 50 115 0.34 0.10 0.25 0.40 0.40 VALUE fF fF fF nH nH nH nH nH UNIT
Rev. 04 - 21 November 2007
12 of 15
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
PACKAGE OUTLINE Plastic surface mounted package; 4 leads SOT343N
D
B
E
A
X
y
HE e
vMA
4
3
Q
A A1 c
1
b1 e1 bp
2
wM B Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 b1 0.7 0.5 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 1.15 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT343N
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-05-21
Rev. 04 - 21 November 2007
13 of 15
NXP Semiconductors
BFG520W; BFG520W/X
NPN 9 GHz wideband transistors
Legal information
Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
Contact information
For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
Rev. 04 - 21 November 2007
14 of 15
NXP Semiconductors
BFG520W; BFG520W/X
NPN 9 GHz wideband transistors
Revision history
Revision history Document ID BFG520W_N_4 Modifications: BFG520W_X_3 BFG520W_2 BFG520W_1 Release date 20071121 Data sheet status Product data sheet Product specification Product specification Change notice Supersedes BFG520W_X_3 BFG520W_2 BFG520W_1 -
*
Page 2; text in Pinning table changed
19981002 19950824 19940829
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 21 November 2007 Document identifier: BFG520W_X_N_4

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